Chang S. | Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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- Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Universの論文著者
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers | 論文
- High Brightness InGaN/GaN LEDs with ESD Protection
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO_2 Layers