Kawashima Hirobumi | Hosei University Dang Laboratory
スポンサーリンク
概要
関連著者
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Kawashima Hirobumi
Hosei University Dang Laboratory
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DANG(or DAN)
Hosei University
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Kawashima H
Toshiba Corp. Kawasaki‐shi Jpn
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Dang(or Dan)
Hosei University Dang Laboratory
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KAWASHIMA Hirobumi
Hosei University
著作論文
- Non-isothermal Device Simulation Taking Account of Transistor Self-Heating and In-Chip Thermal Interdependence (Special Section on VLSI Design and CAD Algorithms)
- Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State (Special Issue on TCAD for Semiconductor Industries)