Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State (Special Issue on TCAD for Semiconductor Industries)

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概要

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• Electro-thermal characteristics of the Si MOSFET in transient state are reported using a non-isothermal devicsimulator where both the transistor's self-heating and the thermal influence of its neighboring devices are duly taken into account.The thermal influence is estimated using a three-dimensional thermal simulator. Based on this set-up, we predict time-dependent electro-thermal characteristics of the Si MOSFET at gate switching and its drain breakdown conditions. We show that the time delay between the electrical response and the latticetemperature rise, is significant and thus can not be neglected. In addition, we found that avalanche and thermal breakdown characteristics largely depend on the slope of the drain input voltage.

• 一般社団法人電子情報通信学会の論文
• 1999-06-25

著者

• Kawashima Hirobumi

  Hosei University Dang Laboratory

• DANG(or DAN)

  Hosei University

• Dang(or Dan)

  Hosei University Dang Laboratory

関連論文

• Non-isothermal Device Simulation Taking Account of Transistor Self-Heating and In-Chip Thermal Interdependence (Special Section on VLSI Design and CAD Algorithms)
• Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State (Special Issue on TCAD for Semiconductor Industries)

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