Feng Songlin | State Key Laboratory Of Functional Materials For Informatics Laboratory Of Nanotechnology Shanghai I
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State Key Laboratory Of Functional Materials For Informatics Laboratory Of Nanotechnology Shanghai I | 論文
- Phase Change Memory Based on (Sb2Te3)0.85--(HfO2)0.15 Composite Film
- Si_2Sb_2Te_6 Phase Change Material for Low-Power Phase Change Memory Application
- Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications
- High Speed Chalcogenide Random Access Memory Based on Si_2Sb_2Te_5
- Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films