Ma Lili | National Laboratory For Infrared Physics Shanghai Institute Of Technical Physics Chinese Academy Of
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National Laboratory For Infrared Physics Shanghai Institute Of Technical Physics Chinese Academy Of | 論文
- InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5 μm Grown by Melt Epitaxy
- Electrical Properties of Melt-Epitaxy-Grown InAs0.04Sb0.96 Layers with Cutoff Wavelength of 12 μm
- Temperature-Dependent Optical Properties of Titanium Oxide Thin Films Studied by Spectroscopic Ellipsometry
- Thickness Dependence of Infrared Optical Properties of LaNiO_3 Thin Films Prepared on Platinized Silicon Substrates
- Thickness Dependence of Infrared Optical Properties of LaNiO3 Thin Films Prepared on Platinized Silicon Substrates