Narayanan V. | Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C
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- Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research Cの論文著者
Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C | 論文
- Gate First PFET Poly-Si/TiN/Al_2O_3 Gate Stacks with Inversion Thicknesses Less than 15A for High Performance or Low Power CMOS Applications
- A Study of NBTI and PBTI (Charge Trapping) in High k Stacks with NiSi, TiN, Re Gates
- High-K/Metal Gate MOSFETsにおける新しいレイアウト依存性(IEDM特集(先端CMOSデバイス・プロセス技術))