Ishikawa Yuichi | Mechanical Engineering Laboratory Agency Of Industrial Science And Technology Ministry Of Internatio
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Mechanical Engineering Laboratory Agency Of Industrial Science And Technology Ministry Of Internatio | 論文
- Room-Temperature Bonding of Si Wafers to Pt Films on SiO_2 or LiNbO_3 Substrates Using Ar-Beam Surface Activation
- Transmission Electron Microscope Observations of Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation
- Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation
- InGaAsP Lasers on GaAs Fabricated by the Surface Activated Wafer Direct Bonding Method at Room Temperature
- InGaAsP Laser on GaAs Fabricated by the Surface Activated Wafer Direct Bonding Method at Room Temperature