Park Chul | Semiconductor Device Lab Samsung Advanced Institute Of Technology
スポンサーリンク
概要
関連著者
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PARK Chul
Semiconductor R&D Center, Samsung Electronics Co. Ltd.
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Park Chul
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Chul
Semiconductor Device Lab Samsung Advanced Institute Of Technology
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SHINDO Daisuke
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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PARK Young
Semiconductor Materials Laboratory, Nano-device Research Center, Korea Institute of Science and Tech
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Park Joong
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
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Hwang Wook-jung
New Technology & Analysis Division National Nanofab Center
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Park Joong
Department Of Materials Science & Engineering Korea Advanced Institute Of Science And Technology
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Lee Sang
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Joong
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Shindo Daisuke
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Shindo Daisuke
Institute For Advanced Materials Processing Tohoku University
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Hong Seung
Semiconductor Device Lab Samsung Advanced Institute Of Technology
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Yang Jun-mo
New Technology & Analysis Division National Nanofab Center
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Cho Jun
Sungkyunkwan University
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CHOI Soo
Semiconductor R&D Center, Samsung Electronics Co. Ltd.
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YOO Moon
Semiconductor R&D Center, Samsung Electronics Co. Ltd.
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KIM Gyu
Korea University
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Cho Jun
Sungkyunkwan Univ. Suwon Kor
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Yoo Jung
New Technology & Analysis Division National Nanofab Center
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Choi Soo
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Yoo Moon
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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ULUGBEK Shaislamov
New Technology & Analysis Division, National Nanofab Center
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AHN Chi
New Technology & Analysis Division, National Nanofab Center
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Park Young
Semiconductor Materials Laboratory Korea Institute Of Science And Technology:department Of Physics K
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Ahn Chi
New Technology & Analysis Division National Nanofab Center
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Ulugbek Shaislamov
New Technology & Analysis Division National Nanofab Center
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Park Young
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Shindo Daisuke
Institiute For Advanced Materials Processing Tohoku University
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Park Joong
Department Of Biology Sung Kyun Kwan University
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Kim Joong
Institute Of Molecular Biology And Genetics And Department Of Molecular Biology Seoul National Unive
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Park Young
Semicondactor Materials Laboratory Korea Insrirute Of Science And Technology
著作論文
- Suppression of Edge Effects Based on Analytic Model for Leakage Current Reduction of Sub-40nm DRAM Device
- Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling