Fukui T | Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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概要
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University | 論文
- Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors
- Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors
- Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism
- Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor
- Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures