Kurabayashi Toru | Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute
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- Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute の論文著者
Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute | 論文
- Lattice Parameter Deviation of InP Single Crystals Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure
- Low-Temperature Formation of Thin-Gate SiO_2 Films by the Ultrahigh-Vacuum Chemical Vapor Deposition with Reduced Subcutaneous Oxidation Using Remote-Plasma-Activated Oxygen and Si_2H_6 : Surfaces, Interfaces, and Films
- Lattice Parameter Deviation of InP Single Crystals Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure