Ishikawa S | Semiconductor Leading Edge Technologies Inc. (selete)
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概要
Semiconductor Leading Edge Technologies Inc. (selete) | 論文
- Plasma Cure Process for Porous SiOCH Films using CF_4 Gas
- Etch-byproduct Pore Sealing for ALD-TaN Deposition on Porous Low-k Film
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation