Kanemura Takahisa | System Lsi Research & Development Center Toshiba Corporation Semiconductor Company
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概要
System Lsi Research & Development Center Toshiba Corporation Semiconductor Company | 論文
- Ultrashallow Junction Formation for Sub-100nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion
- Carrier Transport of SiN Gate Dielectrics for Dual-Gate CMOSFETs
- Ultra Shallow Junction Formation for 80nm CMOS by Controlling Transient Enhanced Diffusion