Lucovsky Gerald | Departments Of Physics Materials Science And Engineering And Electrical And Computer Engineering Nor
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- 同名の論文著者
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Departments Of Physics Materials Science And Engineering And Electrical And Computer Engineering Nor | 論文
- Chemical Bonding at Interfaces between Si (100) and High-K Dielectrics : Competing Effects of i) Process Gas-Substrate and ii) Film Deposition Reactions
- A Unified Model for Charge Defect Generation in a-SiH : Photo-Induced Defects in Photovoltaic (PV) Devices and Current Induced Defects in Thin Film Transistors (TFTs)
- Local Atomic Bonding in Fluorinated Silicon Oxides: Bond-Ionicity-Controlled Contributions of Infrared-Active Vibrations to the Static Dielectric Constant
- Intrinsic Limitations on Ultimate Device Performance and Reliability from Transition Regions at i) Si-Dielectric Interfaces and ii) Internal Interfaces
- Differences between the Electrical Properties of Nitrided Si-SiO_2 Interfaces Formed by (a) Post-Oxidation, Remote Plasma-Assisted Nitridation and (b) Remote Plasma-Assisted Deposition