Hiramoto Toshiro | Vlsi Design And Education Center The University Of Tokyo:institute Of Industrial Science The Univers
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Vlsi Design And Education Center The University Of Tokyo:institute Of Industrial Science The Univers | 論文
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- Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
- Modeling of Body Factor and Subthreshold Swing in Short Channel Bulk MOSFETs
- Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness Improvement
- Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain