Rhie H. | Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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- Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. の論文著者
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. | 論文
- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
- Influence of Defect Segregation on the Electrical Properties of Nb-doped SrTiO_3 Grain Boundary Layer
- Viewing Angle Enhancement of Three-Dimension/Two-Dimension Convertible Integral Imaging Display Using Double Collimated or Noncollimated Illumination
- Numerical Analysis of One-Dimensional Magnetophotonic Crystals with an Active Layer of a Highly Bi-Substituted Iron Garnet
- Degradation Phenomenon of p+to p+ Isolation Characteristics Caused by Carrier Injection in a High-Voltage Process