Kashiwa Takuo | High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation Department Of Physic
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High Frequency & Optical Semiconductor Div. Mitsubishi Electric Corporation Department Of Physic | 論文
- A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs
- A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
- An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AlGaAs/InGaAs Pseudomorphic HEMT
- Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer
- Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power