Lee Jong-ho | Advanced Process & Development Team System Lsi Division & 3technology & Development Team
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- Advanced Process & Development Team System Lsi Division & 3technology & Development Teamの論文著者
Advanced Process & Development Team System Lsi Division & 3technology & Development Team | 論文
- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al_2O_3p-Si Metal-Oxide-Semiconductor Capacitor
- The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET
- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor
- Effect of the Silicidation Reaction Condition on the Gate Oxide Integrity in Ti-polycide Gate