Heyns M | Interuniversity Microelectronics Centre

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• 同名の論文著者
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Interuniversity Microelectronics Centre | 論文

• Current-Voltage Characteristics of Gate Oxides after Hard Breakdown
• Morphology Change of Artificial Crystal Originated Particles, and the Effect on Gate Oxide Integrity
• Breakdown and Recovery of Thin Gate Oxides
• Fabrication and Characterization of Artificial Crystal Originated Particles
• Critical Parameters for Obtaining Low Particle Densities on a Si Surface in an HF-Last Process

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