Shino T | R&d Center Kawasaki‐shi Jpn
スポンサーリンク
概要
R&d Center Kawasaki‐shi Jpn | 論文
- Evaluation of 0.3μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application
- Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
- Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation
- Evaluation of 0.3μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application
- An Ultra Low Voltage SOI CMOS Pass-Gate Logic (Special Issue on SOI Devices and Their Process Technologies)