Takeuchi Osamu | Institute Of Applied Physics Crest University Of Tsukuba
スポンサーリンク
概要
Institute Of Applied Physics Crest University Of Tsukuba | 論文
- Electronic Structure of the Si(100) Surface A Defects Analyzed by Scanning Tunneling Spectroscopy at 80 K
- Pseudo-Real Time Observation of the Dynamics of Phase Defect on Si(100) Surface
- Origin, Cause, and Electronic Structure of the Symmetric Dimers of Si(100) at 80 K
- Structure Transformation of the C Defects Observed at Low Temperature (80 K)
- Scanning Tunneling Microscopy on Ordered Self-Assemblies of Cyclodextrin lnclusion Complexes Formed by Substrate-Induced Two-Dimensional Crystal Growth