Inamura T | The Institute Of Industrial Science The University Of Tokyo
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The Institute Of Industrial Science The University Of Tokyo | 論文
- Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs(Special Issue on Advanced Sub-0.1μm CMOS Devices)
- Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots
- Single-Electron Circuit Simulation (Special Issue on Technology Challenges for Single Electron Devices)
- Occlusion Robust and Illumination Invariant Vehicle Tracking for Acquiring Detailed Statistics from Traffic Images(Special Issue on Information System Technologies for ITS)