Honda Yoshiaki | New Product Technologies Development Department Matsushita Electric Works Ltd.
スポンサーリンク
概要
- HONDA Yoshiakiの詳細を見る
- 同名の論文著者
- New Product Technologies Development Department Matsushita Electric Works Ltd.の論文著者
関連著者
-
Honda Yoshiaki
New Product Technologies Development Department Matsushita Electric Works Ltd.
-
Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Graduate School Of Eng. To
-
Watabe Yoshifumi
New Product Technologies Development Department Matsushita Electric Works Ltd.
-
KOSHIDA Nobuyoshi
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agri
-
Koshida Nobuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Technology Tokyo University Of Agricu
-
WATABE Yoshifumi
New Product Technologies Development Department, Matsushita Electric Works, Ltd.
-
HONDA Yoshiaki
New Product Technologies Development Department, Matsushita Electric Works, Ltd.
-
Koshida Nobuyoshi
Department of Electrical and Electronic Engineering, Faculty of Technology, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
-
Watanabe Yoshifumi
New Product Technologies Development Department, Matsushita Electric Works, Ltd., Kadoma, Osaka 571-8686, Japan
-
Watabe Yoshifumi
New Product Technologies Development Department, Matsushita Electric Works, Ltd., Kadoma, Osaka 571-8686, Japan
著作論文
- Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission
- Dynamic Analyses of Thermally Induced Ultrasonic Emission from Nanocrystalline Silicon
- Effect of Bilayer Structure on the Long-Term Stability of Nanocrystalline Porous Silicon Ultrasonic Emitter
- Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emission
- Tunable Output Directivity of Thermally Induced Ultrasound Generator Based on Nanocrystalline Porous Silicon
- Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon Device under Impulse Operation