Nakayama N | Semiconductor Technology Academic Research Center
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概要
Semiconductor Technology Academic Research Center | 論文
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Evaluation of Strain in Si-on-Insulator Substrate Induced by Si3N4 Capping Film
- Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
- Magnetic Susceptibility and Superconductivity in (La_Sr_x)_2CuO_4
- 1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation(Semiconductor Materials and Devices)