Urano Satoshi | Advanced Semiconductor Devices Research Laboratories Toshiba Corporation
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概要
Advanced Semiconductor Devices Research Laboratories Toshiba Corporation | 論文
- Merits and Demerits of Single Electron Effects in Ultrasmall Semiconductor Devices
- Reliability Concern of Ultra-Thin Gate Oxides
- Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-μm Intersubband Transition in AlGaN/GaN Quantum Wells
- 0.8 μm CMOS Process Compatible 60 V-100 mΩ・mm^2 Power MOSFET on Bonded SOI
- 0.8μm CMOS Process Compatible 60V - 100mΩ・mm^2 Power MOSFET on Bonded SOI