Sakai I | Nec Corp. Sagamihara‐shi Jpn

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概要

• SAKAI Isamiの詳細を見る
• 同名の論文著者
• Nec Corp. Sagamihara‐shi Jpnの論文著者

関連著者

• MOGAMI Tohru

  Microelectronics Research Laboratories, NEC Corporation

• Mogami T

  Silicon Systems Research Laboratories Nec Corporation

• Mogami T

  Nec Corp. Sagamihara‐shi Jpn

• Mogami Tohru

  Microelectronics Research Laboratories Nec Corporation

• Fukuma Masao

  Microelectronics Res. Labs., NEC Corporation

• Fukuma M

  Matsue National Coll. Technol. Matsue‐shi Jpn

• Fukuma Masao

  Microelectronics Res. Labs. Nec Corporation

• Johansson Lars

  ULSI Device Development Laboratories, NEC Corporation

• Sakai Isami

  ULSI Device Development Laboratories, NEC Corporation

• Sakai I

  Nec Corp. Sagamihara‐shi Jpn

• Johansson Lars

  Ulsi Device Development Laboratories Nec Corporation

もっと見る 閉じる

著作論文

• Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p^+ Poly-Si Gates

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