Nishimura A | The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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- The Authors Are With Memory Research & Development Center Texas Instruments Inc.の論文著者
The Authors Are With Memory Research & Development Center Texas Instruments Inc. | 論文
- Influence of the Relaxation Current in Ba_xSr_lt(1-x)gtTiO_3 Thin Film Capacitors on DRAM Operation
- Effects of Postannealing in Oxygen Ambient on Leakage Properties of (Ba, Sr)TiO_3 Thin-Film Capacitors
- Formation of Reliable Pb(Ti, Zr)O_3 Thin-Film Capacitors for Read/Write Endurance of Ferroelectric Non-volatile Memories(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Dielectric Properties of (Ba, Sr)TiO_3 Thin Films and their Correlation with Oxygen Vacancy Density
- Origin of Dielectric Relaxation Observed for Ba_Sr_TiO_3 Thin-Film Capacitor