Oyamatsu H | Ulsi Device Engineering Laboratory Toshiba Corporation
スポンサーリンク
概要
Ulsi Device Engineering Laboratory Toshiba Corporation | 論文
- Design Methodology of Deep Submicron CMOS Devices for 1 V Operation (Special Issue on Low-Power LSI Technologies)
- Low-Voltage and Power CMOS Technology
- X-Ray Diffraction Study on Symmethry of β-Mn Structure
- Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
- Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation