Ono M | Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation | 論文
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
- Evaluation of Flexible Security Models on a Mobile Agent Platform