CHUNG T. | DRAM Process Architecture Team, Samsung Electronics Co., Ltd.

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概要

• 同名の論文著者
• DRAM Process Architecture Team, Samsung Electronics Co., Ltd.の論文著者

関連著者

• LEE S.

  DRAM PM Center, Samsung Electronics Co.

• Kim S.

  Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.

• Park Y.

  Dram Process Architecture Team Samsung Electronics Co. Ltd.

• Lee S.

  Dram Pm Center Samsung Electronics Co.

• Lee J.

  Dram Process Architecture Team Samsung Electronics Co. Ltd.

• YUN C.

  DRAM Process Architecture Team, Samsung Electronics Co., Ltd.

• BAE D.

  DRAM Process Architecture Team, Samsung Electronics Co., Ltd.

• SHIN S.

  DRAM Process Architecture Team, Samsung Electronics Co., Ltd.

• LEE D.

  DRAM Process Architecture Team, Samsung Electronics Co., Ltd.

• LEE E.

  DRAM Process Architecture Team, Samsung Electronics Co., Ltd.

• ROH B.

  DRAM Process Architecture Team, Samsung Electronics Co., Ltd.

• NAM I.

  DRAM Process Architecture Team, Samsung Electronics Co., Ltd.

• CHUNG T.

  DRAM Process Architecture Team, Samsung Electronics Co., Ltd.

• Kim S.

  Dram Process Architecture Team Samsung Electronics Co. Ltd.

• Lee S.

  Dram Process Architecture Team Samsung Electronics Co. Ltd.

• Shin S.

  Dram Process Architecture Team Samsung Electronics Co. Ltd.

• Roh B.

  Dram Process Architecture Team Samsung Electronics Co. Ltd.

• LEE J.

  DRAM Process Architecture Team, Samsung Electronics Co., Ltd.

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著作論文

• A Novel Cell Structure with Bit Line Cap Spacer (BCS) and Top Enlarged Storage Node Contact (TESC) for 90nm DRAM Technology and Beyond

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