YU Hong | Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore
スポンサーリンク
概要
- Yu Hong Yuの詳細を見る
- 同名の論文著者
- Silicon Nano Device Lab (SNDL), ECE Department, National University of Singaporeの論文著者
関連著者
-
Kwong Dim
Microelectronics Research Center Department Of Ece University Of Texas
-
Li Ming
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
-
Wang Xin
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
-
CHEN Gang
Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore
-
YU Hong
Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore
-
YEO Yee-Chia
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
-
Li Ming
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
-
Yeo Yee-chia
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
-
SHEN Chen
Silicon Nano Device Lab, Dept. of ECE, National University of Singapore (NUS)
-
Shen Chen
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
-
Yeo Yee-Chia
Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore, 119260 Singapore
-
Shen Chen
Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore, 119260 Singapore
-
Kwong Dim
Microelectronics Research Center, Department of ECE, University of Texas, Austin, TX 78712, USA
-
Li Ming
Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore, 119260 Singapore
-
Wang Xin
Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore, 119260 Singapore
-
Yu Hong
Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore, 119260 Singapore
著作論文
- Dynamic Bias-Temperature Instability in Ultrathin SiO_2 and HfO_2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime
- Dynamic Bias-Temperature Instability in Ultrathin SiO2 and HfO2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime