Chang Wai-jyh | Microwave Devices Team Etri
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概要
Microwave Devices Team Etri | 論文
- Comparative Study of DC and Microwave Characteristics of 0.12μm T-Shaped Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Hybrid and Conventional E-beam Lithography Process
- Influence of T-gate shape on the device characteristics in SiN-assisted 0.12um AlGaAs/InGaAs PHEMT
- A Comparative Study on the DC, Microwave Characteristics of 0.12μm Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Dielectric Assisted Process
- 0.12μm Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon-Nitride-Assisted Process
- PdGe-Based Ohmic Contact on n-GaAs with Highly and Poorly Doped Layers