Hwu Ming-jyh | Department Of Electrical Engineering National Central University Jungli
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概要
Department Of Electrical Engineering National Central University Jungli | 論文
- Device Linearity and Gate Voltage Swing Improvement by Al_Ga_As/In_Ga_As Double Doped-Channel Design (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Nitrogen Induced Extrinsic States (NIES) in Effective Work Function Instability of TiN_x/SiO_2 and TiN_x/HfO_2 Gate Stacks
- Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
- High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
- High Power In_0.49Ga_0.51P/In_0.15Ga_0.85As Heterostructure Doped-Channel FETs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)