Park Y‐j | Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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概要
Feram Team Memory R&d Division Hynix Semiconductor Incorporated | 論文
- Issues and Reliability of High-Density FeRAMs
- Ferroelectric Memories using Randomly Oriented (Bi_La_x)_4Ti_3O_ Films
- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
- Characterization of the Co-Silicide Penetration Depth into the Junction Area
- Ohmic Contact Properties of Tungsten Plug and Ferroelectric Properties of (Bi,La)_4Ti_3O_ Thin Film in Stacked Capacitor Structure