Takeno Shiroh | Environmental Engineering Laboratory R&d Center Toshiba Corporation
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概要
Environmental Engineering Laboratory R&d Center Toshiba Corporation | 論文
- Precipitation of Boron in Highly Boron-Doped Silicon
- Hole Generation without Annealing in High Dose Boron Implanted Silicon : Heavy Doping by B_ Icosahedron as a Double Acceptor
- Interfacial Layers between Si and Ru Films Deposited by Sputtering in Ar/O_2 Mixture Ambient
- Anomalous Junction Leakage Behavior of Ti Self Aligned Silicide Contacts on Ultra-Shallow Junctions
- Anomalous Junction Leakage Behavior of Ti-SALICIDE Contacts on Ultra-Shallow Junctions