HOSOI Hirotaka | Innovation Plaza Hokkaido, Japan Science and Technology Agency (JST)
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概要
- Hosoi Hirotakaの詳細を見る
- 同名の論文著者
- Innovation Plaza Hokkaido, Japan Science and Technology Agency (JST)の論文著者
関連著者
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HOSOI Hirotaka
Innovation Plaza Hokkaido, Japan Science and Technology Agency (JST)
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SUEOKA Kazuhisa
Graduate school of Engineering, Hokkaido University, PRESTO, Japan Science and Technology Corporatio
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MUKASA Koichi
Graduate School of Engineering, Hokkaido University, CREST, Japan Science and Technology Corpporatio
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Mukasa Koichi
Graduate School Of Engineering Hokkaido University
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Sueoka Kazuhisa
Nanoelectronics Laboratory Graduate School Of Engineering Hokkaido University
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UEHARA Nobutomo
Graduate School of Engineering, Hokkaido University
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Ishida Nobuyuki
Graduate School Of Engineering Hokkaido University
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Mukasa Koichi
Graduate School of Engineering, Hokkaido University, Kita-13 Nishi-8, Kita-ku, Sapporo 060-8628, Japan
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Sueoka Kazuhisa
Graduate School of Engineering, Hokkaido University, Kita-13 Nishi-8, Kita-ku, Sapporo 060-8628, Japan
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SUBAGYO Agus
Graduate School of Information Science and Technology, Hokkaido University
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Subagyo Agus
Graduate School Of Information Science And Technology Hokkaido University
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ISHIDA Nobuyuki
Graduate School of Engineering, Hokkaido University
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Subagyo Agus
Graduate School of Engineering, Hokkaido University, Kita-13 Nishi-8, Kita-ku, Sapporo 060-8628, Japan
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Uehara Nobutomo
Graduate School of Engineering, Hokkaido University, Kita-13 Nishi-8, Kita-ku, Sapporo 060-8628, Japan
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Hosoi Hirotaka
Innovation Plaza Hokkaido, Japan Science and Technology Agency (JST), Kita-19 Nishi-11, Kita-ku, Sapporo 060-0819, Japan
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Ishida Nobuyuki
Graduate School of Engineering, Hokkaido University, Kita-13 Nishi-8, Kita-ku, Sapporo 060-8628, Japan
著作論文
- Self-Assembled Low-Dimensional Potassium Structures on GaAs(110)
- Non-Contact Atomic Force Microscopy Observation on GaAs(110) Surface with Tip-Induced Relaxation
- Self-Assembled Low-Dimensional Potassium Structures on GaAs(110)
- Non-Contact Atomic Force Microscopy Observation on GaAs(110) Surface with Tip-Induced Relaxation