Nishikawa H | Research Center For Nano-device And System Nagoya Institute Of Technology
スポンサーリンク
概要
- NISHIKAWA Hiroakiの詳細を見る
- 同名の論文著者
- Research Center For Nano-device And System Nagoya Institute Of Technologyの論文著者
Research Center For Nano-device And System Nagoya Institute Of Technology | 論文
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- High Performance of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
- Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer
- Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate