Miura Y | Nec Corp. Ibaraki Jpn
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概要
Nec Corp. Ibaraki Jpn | 論文
- Fabrication of Self-Aligned Surface Tunnel Transistors with a 80-nm Gate Length
- Self-Aligned Surface Tunnel Transistors Fabricated by a Regrowth Technique
- Surface Tunnel Transistor: Gate-Controlled Lateral Interband Tunneling Device
- X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique
- Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact