Hoffmann Axel | Institut Fur Festkorperphysik Technische Universitat Berlin

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Institut Fur Festkorperphysik Technische Universitat Berlin | 論文

• Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine
• Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs
• Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
• High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots ( Quantum Dot Structures)
• Gain and Threshold of Quantum Dot Lasers : Theory and Comparison to Experiments ( Quantum Dot Structures)

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