Ohuchi Kazuya | System Lsi Research & Development Center Semiconductor Company Toshiba Corporation
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概要
System Lsi Research & Development Center Semiconductor Company Toshiba Corporation | 論文
- Intrinsic Junction Leakage Generated by Cobalt In-Diffusion during CoSi_2 Formation
- Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow STI
- Junction Leakage Generation by NiSi Thermal Instability Characterized Using Damage-Free n+/p Silicon Diodes