Park Donggun | Dram Process Architecture Team Memory Product & Technology Division Samsung Electronics Co. Ltd.
スポンサーリンク
概要
- Park Donggunの詳細を見る
- 同名の論文著者
- Dram Process Architecture Team Memory Product & Technology Division Samsung Electronics Co. Ltd.の論文著者
関連著者
-
Lee Chihoon
School Of Materials Science And Engineering Seoul National University
-
Park Donggun
Dram Process Architecture Team Memory Product & Technology Division Samsung Electronics Co. Ltd.
-
Jo Namhyuk
Dram Process Architecture Team Memory Product & Technology Division Samsung Electronics Co. Ltd.
-
Lee Wonshik
Dram Process Architecture Team Memory Product & Technology Division Samsung Electronics Co. Ltd.
-
Hwang Chanseong
Dram Process Architecture Team Memory Product & Technology Division Samsung Electronics Co. Ltd.
-
Kim Hyeong
School Of Electrical And Electronics Engineering Chung-ang University
-
Kim Hyeong
School of Materials Science and Engineering, Seoul National University
-
JO Namhyuk
DRAM Process Architecture Team, Memory Product & Technology Division, Samsung Electronics Co., Ltd.
-
HWANG Chanseong
DRAM Process Architecture Team, Memory Product & Technology Division, Samsung Electronics Co., Ltd.
-
LEE Wonshik
DRAM Process Architecture Team, Memory Product & Technology Division, Samsung Electronics Co., Ltd.
-
Kim Hyeong
School Of Materials Science And Engineering Seoul National University
-
Kim Hyeong
School Of Materials Science & Engineering Seoul National University
-
Jo Namhyuk
DRAM Process Architecture Team, Memory Product & Technology Division, Samsung Electronics Co., Ltd., San#24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do, Korea
-
Hwang Chanseong
DRAM Process Architecture Team, Memory Product & Technology Division, Samsung Electronics Co., Ltd., San#24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do, Korea
-
Park Donggun
DRAM Process Architecture Team, Memory Product & Technology Division, Samsung Electronics Co., Ltd., San#24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do, Korea
著作論文
- Deep Submicron CMOS Technology Using Top-Edge Round STI and Dual Gate Oxide for Low Power 256M-Bit Model DRAM
- Deep Submicron CMOS Technology Using Top-Edge Round STI and Dual Gate Oxide for Low Power 256 M-Bit Mobile DRAM