Inoue D | Materials & Devices Development Center Bu Sanyo Electric Co. Ltd.
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概要
Materials & Devices Development Center Bu Sanyo Electric Co. Ltd. | 論文
- Reduction in Operating Current of High-Power 660nm Laser Diodes Using a Transparent AlGaAs Cap Layer
- Reduction in Operating Current of High-Power 660-nm Laser Diodes Using a Transparent AlGaAs Cap Layer
- High-Power 660-nm-Band AlGaInP Laser Diodes with a Small Aspect Ratio for Beam Divergence
- High-Power 200 mW 660 nm AlGaInP Laser Diodes with Low Operating Current
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers