Matsushima M | Sumitomo Electric Ind. Ltd. Hyogo Jpn
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概要
Sumitomo Electric Ind. Ltd. Hyogo Jpn | 論文
- Fabrication of Self-Aligned Surface Tunnel Transistors with a 80-nm Gate Length
- Self-Aligned Surface Tunnel Transistors Fabricated by a Regrowth Technique
- Surface Tunnel Transistor: Gate-Controlled Lateral Interband Tunneling Device
- Synthesis and Surface Acoustic Wave Property of Aluminum Nitride Thin Films Fabricated on Silicon and Diamond Substrates Using the Sputtering Method : Surfaces, Interfaces, and Films
- Study on Surface Acoustic Wave Characteristics of SiO_2/Interdigital-Transducer/ZnO/Diamond Structure and Fabrication of 2.5 GHz Narrow Band Filter