Lee H‐d | Advanced Technology Laboratory. Lg Semicon Co.
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概要
Advanced Technology Laboratory. Lg Semicon Co. | 論文
- Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs
- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
- Characterization of Corner Induced Leakage Current in Shallow Silicided n^+/p Junction
- Characterization of the Co-Silicide Penetration Depth into the Junction Area
- On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology