Han M‐k | School Of Electrical Eng. & Computer Science #50 Seoul National University
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School Of Electrical Eng. & Computer Science #50 Seoul National University | 論文
- A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
- Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
- Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
- SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)
- New field plate structure for suppression of leakage current of AlGaN/GaN high electron mobility transistors (Special issue: Solid state devices and materials)