Park J | Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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概要
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd. | 論文
- Suppressed Boron Penetration in p^+ poly-Si/Al_2O_3/Si Metal-Oxide-Semiconductor System by Remote Plasma Nitridation of Al_2O_3 Surface
- Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Physical and Electrical Characteristics of Poly-Si/ZrO_2/SiO_2/Si MOS Structures
- Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM
- Degradation of Nitride/W/WN_x/Poly-Si Gate Stack by Post-Thermal Processes