Hirabayashi Atsuo | Advanced Device Technology Laboratory Fuji Electric Corporate Research & Development Ltd.

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概要

関連著者

Sumida Hitoshi
Fuji Electric Co. Ltd.
Sumida Hitoshi
Advanced Device Technology Laboratory Fuji Electric Corporate Research & Development Ltd.
HIRABAYASHI Atsuo
Advanced Device Technology Laboratory, Fuji Electric Corporate Research & Development Ltd.
Sumida Hitoshi
Advanced Device Technology Laboratory Fuji Electric Corporate R Amp Ltd.
Hirabayashi Atsuo
Advanced Device Technology Laboratory Fuji Electric Corporate Research & Development Ltd.
Hirabayashi Atsuo
Advanced Device Technology Laboratory Fuji Electric Corporate R Amp Ltd.

著作論文

Measurements of the Breakdown Voltage of the Lateral Insulated Gate Bipolar Transistor on the Silicon-on-Insulator Film with Varying Implantation Doses for the N-Buffer Layer

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