OTOGAWA Naotaka | Kankyo Semiconductors Co., Ltd.
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概要
関連著者
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Kuroda Ryo
National Institute Of Advanced Industrial Science And Technology (aist)
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MAKITA Yunosuke
National Institute of Advanced Industrial Science and Technology (AIST)
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TANOUE Hisao
National Institute of Advanced Industrial Science and Technology (AIST)
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OTOGAWA Naotaka
Kankyo Semiconductors Co., Ltd.
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NAKAYAMA Yasuhiko
Kankyo Semiconductors Co., Ltd.
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Tanoue H
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanoue H
National Institute Of Advanced Industrial Science And Technology (aist)
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LIU Zhengxin
National Institute of Advanced Industrial Science and Technology (AIST)
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FUKUZAWA Yasuhiro
Kankyo Semiconductors Co., Ltd.
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LIU Zhengxin
Technology Development Department, System Engineers' Co., Ltd.
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OSAMURA Masato
Technology Development Department, System Engineers' Co., Ltd.
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OOTSUKA Teruhisa
Technology Development Department, System Engineers' Co., Ltd.
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FUKUZAWA Yasuhiro
Technology Development Department, System Engineers' Co., Ltd.
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MISE Takahiro
Technology Development Department, System Engineers' Co., Ltd.
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LIU Zhengxin
System Engineers' Co., Ltd.
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OSAMURA Masato
System Engineers' Co., Ltd.
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OOTSUKA Teruhisa
System Engineers' Co., Ltd.
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WANG Shinan
Kankyo Semiconductors Co., Ltd.
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SUZUKI Yasuhito
System Engineers' Co., Ltd.
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MISE Takahiro
System Engineers' Co., Ltd.
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Mise Takahiro
System Engineers' Co. Ltd.
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Osamura Masato
System Engineers' Co. Ltd.
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Wang Shinan
Kankyo Semiconductors Co. Ltd.
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Makita Y
National Institute Of Advanced Industrial Science And Technology (aist)
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Nakayama Yasuhiko
Kankyo Semiconductors Co. Ltd.
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Otogawa Naotaka
Kankyo Semiconductors Co. Ltd.
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Ootsuka Teruhisa
System Engineers' Co. Ltd.
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Fukuzawa Yasuhiro
Kankyo Semiconductors Co. Ltd.
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Suzuki Yasuhito
System Engineers' Co. Ltd.
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Liu Zhengxin
System Engineers' Co., Ltd., Yamato, Kanagawa 242-0001, Japan
著作論文
- Arsenic Doping of n-Type β-FeSi_2 Films by Sputtering Method
- Boron Doping for p-Type β-FeSi_2 Films by Sputtering Method