Okada T | Advanced Industrial Sci. And Technol. Ibaraki Jpn
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概要
Advanced Industrial Sci. And Technol. Ibaraki Jpn | 論文
- Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Feasibility of High-Data-Rate Media with Ge-Sb-Te Phase-Change Material
- Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition