Arita K | Department Of Physics Nagoya Institute Of Technology
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概要
Department Of Physics Nagoya Institute Of Technology | 論文
- Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- EPR Study of Monoclinic Centres in CsCdF_3 and CsCaF_3 Co-Doped with Gd^ and Na^+ Ions
- EPR Study of Tetragonal and Orthorhombic Fe^ Centres in Rb_2CdF_4 Crystals