Tsui Bing-yue | Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University | 論文
- Investigation of A 450V Rating Silicon-On-Insulator Lateral-Double-Diffused-Metal-Oxide-Semiconductor Fabrication by 12/25/5/40V Bipolar-Complementary Metal-Oxide-Semiconductor Double-Diffused Metal-Oxide-Semiconductor Process on Bulk Silicon Substrate
- Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor
- Characterizing Trench-Gate Power Metal-Oxide-Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom
- Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor
- Investigation of A 450 V Rating Silicon-On-Insulator Lateral-Double-Diffused-Metal–Oxide– Semiconductor Fabrication by 12/25/5/40 V Bipolar-Complementary Metal–Oxide–Semiconductor Double-Diffused Metal–Oxide–Semiconductor Process on Bulk Silicon Substrate